
Deutsch-Chinesische Enzyklopädie, 德汉百科
IT-Times


云计算(英语:Cloud Computing),是一种基于互联网的计算方式,通过这种方式,共享的软硬件资源和信息可以按需求提供给计算机各种终端和其他设备。
云计算是继1980年代大型计算机到客户端-服务器的大转变之后的又一种巨变。用户不再需要了解“云”中基础设施的细节,不必具有相应的专业知识,也无需直接进行控制。[1]云计算描述了一种基于互联网的新的IT服务增加、使用和交付模式,通常涉及通过互联网来提供动态易扩展而且经常是虚拟化的资源。[2][3]
在“软件即服务(SaaS)”的服务模式当中,用户能够访问服务软件及数据。服务提供者则维护基础设施及平台以维持服务正常运作。SaaS常被称为“随选软件”,并且通常是基于使用时数来收费,有时也会有采用订阅制的服务。
推广者认为,SaaS使得企业能够借由外包硬件、软件维护及支持服务给服务提供者来降低IT营运费用。另外,由于应用程序是集中供应的,更新可以即时的发布,无需用户手动更新或是安装新的软件。SaaS的缺陷在于用户的数据是存放在服务提供者的服务器之上,使得服务提供者有能力对这些数据进行未经授权的访问。
用户通过浏览器、桌面应用程序或是移动应用程序来访问云的服务。推广者认为云计算使得企业能够更迅速的部署应用程序,并降低管理的复杂度及维护成本,及允许IT资源的迅速重新分配以因应企业需求的快速改变。
云计算依赖资源的共享以达成规模经济,类似基础设施(如电力网)。服务提供者集成大量的资源供多个用户使用,用户可以轻易的请求(租借)更多资源,并随时调整使用量,将不需要的资源释放回整个架构,因此用户不需要因为短暂尖峰的需求就购买大量的资源,仅需提升租借量,需求降低时便退租。服务提供者得以将目前无人租用的资源重新租给其他用户,甚至依照整体的需求量调整租金。

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互补式金属氧化物半导体(英语:Complementary Metal-Oxide-Semiconductor,缩写作 CMOS;简称互补式金氧半),是一种集成电路的设计工艺,可以在硅质晶圆模板上制出NMOS(n-type MOSFET)和PMOS(p-type MOSFET)的基本元件,由于NMOS与PMOS在物理特性上为互补性,因此被称为CMOS。此一般的工艺上,可用来制作电脑电器的静态随机存取内存、微控制器、微处理器与其他数字逻辑电路系统、以及除此之外比较特别的技术特性,使它可以用于光学仪器上,例如互补式金氧半图像传感装置在一些高级数码相机中变得很常见。
互补式金属氧化物半导体具有只有在晶体管需要切换启动与关闭时才需消耗能量的优点,因此非常节省电力且发热量少,且工艺上也是最基础而最常用的半导体元件。早期的只读存储器主要就是以这种电路制作的,由于当时电脑系统的BIOS程序和参数信息都保存在ROM和SRAM中,以致在很多情况下,当人们提到“CMOS”时,实际上指的是电脑系统之中的BIOS单元,而一般的“CMOS设置”就是意指在设定BIOS的内容。
Complementary metal-oxide-semiconductor (engl.; ‚sich ergänzender Metall-Oxid-Halbleiter‘), Abk. CMOS, ist eine Bezeichnung für Halbleiterbauelemente, bei denen sowohl p-Kanal- als auch n-Kanal-MOSFETs auf einem gemeinsamen Substrat verwendet werden.
Unter CMOS-Technik bzw. CMOS-Technologie versteht man
- sowohl den verwendeten Halbleiterprozess, der zur Realisierung von integrierten digitalen wie analogen Schaltungen verwendet wird,
- als auch eine Logikfamilie. Die CMOS-Technologie stellt heutzutage die meistgenutzte Logikfamilie dar und wird hauptsächlich für integrierte Schaltkreise (ICs) verwendet.
Die Technik wurde 1963 von Frank Wanlass beim Halbleiterhersteller Fairchild Semiconductor entwickelt und auch patentiert.[1][2]
Complementary metal–oxide–semiconductor, abbreviated as CMOS /ˈsiːmɒs/, is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).
CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).[1] The words "complementary-symmetry" refer to the typical design style with CMOS using complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.[2]
Two important characteristics of CMOS devices are high noise immunity and low static power consumption.[3] Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or N-type metal-oxide-semiconductor logic (NMOS) logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in very-large-scale integration (VLSI) chips.
The phrase "metal–oxide–semiconductor" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-κ dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and smaller sizes.[4]
On appelle CMOS, ou Complementary Metal Oxide Semiconductor, une technologie de fabrication de composants électroniques et, par extension, les composants fabriqués selon cette technologie. Ce sont pour la plupart des circuits logiques (NAND, NOR, etc.) comme ceux de la famille Transistor-Transistor logic (TTL) mais, à la différence de ces derniers, ils peuvent être aussi utilisés comme résistance variable.
Dans ces circuits, un étage de sortie est composé d'un couple de transistors MOSFET N et P placés de manière symétrique et réalisant chacun la même fonction. Du fait de leur caractéristique de fonctionnement inversée, un transistor est passant alors que l'autre est bloquant1 (ils sont donc complémentaires, d'où l'appellation complementary).
Il CMOS (acronimo di complementary metal-oxide semiconductor), è un tipo di tecnologia utilizzata in elettronica digitale per la progettazione di circuiti integrati, alla cui base sta l'uso dell'invertitore a transistor MOSFET.
Si tratta di una struttura circuitale costituita dalla serie di una rete di "Pull-Up" ed una di "Pull-Down": la prima s'incarica di replicare correttamente il livello logico alto LL1 mentre alla seconda è destinata la gestione del livello logico basso LL0. Tale topologia circuitale fu inventata da Frank Wanlass nel 1967.
La rete di Pull-Up è costituita da MOSFET a canale P, che si "accendono" solo se la tensione presente sul gate (misurata rispetto al source) è minore della tensione di soglia. Inversamente la rete di Pull-Down è costituita da MOSFET a canale N che si accendono solo se la tensione presente sul gate (misurata rispetto al source) è maggiore della tensione di soglia.
Per comprendere come sia strutturata la tecnologia CMOS può risultare utile osservare una porta logica NOT realizzata con tecnologia CMOS. Si può notare come, nell'eventualità che il segnale d'ingresso sia a LL1, sia il solo N-MOS ad attivarsi portando l'uscita a LL0. Inversamente, con l'ingresso a LL0, è il solo P-MOS ad attivarsi portando l'uscita a LL1. Particolarità di questa porta logica è di avere una dinamica logica d'uscita piena, cioè pari alla massima tensione applicata, Vcc; inoltre né la rete di pull-up né la rete di pull-down soffre di effetto body. La componentistica realizzata in questa tecnologia è caratterizzata da un consumo di corrente estremamente basso.
El semiconductor complementario de óxido metálico o complementary metal-oxide-semiconductor (CMOS) es una de las familias lógicas empleadas en la fabricación de circuitos integrados. Su principal característica consiste en la utilización conjunta de transistores de tipo pMOS y tipo nMOS configurados de forma tal que, en estado de reposo, el consumo de energía es únicamente el debido a las corrientes parásitas, colocado en la placa base.
En la actualidad, la mayoría de los circuitos integrados que se fabrican usan la tecnología CMOS. Esto incluye microprocesadores, memorias, procesadores digitales de señales y muchos otros tipos de circuitos integrados digitales de consumo considerablemente bajo.
Drenador (D) conectada a tierra (Vss), con valor 0; el valor 0 no se propaga al surtidor (S) y por lo tanto a la salida de la puerta lógica. El transistor pMOS, por el contrario, está en estado de conducción y es el que propaga valor 1 (Vdd) a la salida.
Otra característica importante de los circuitos CMOS es que son “regenerativos”: una señal degradada que acometa una puerta lógica CMOS se verá restaurada a su valor lógico inicial 0 ó 2, siempre que aún esté dentro de los márgenes de ruido que el circuito pueda tolerar.






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